Surface Mounted Device PNP Resistor Equipped Transistor Nexperia PDTA144EU 115 for Digital Switching

Categories	Single, Pre-Biased Bipolar Transistors
Emitter-Base Voltage VEBO:	10V
Input Resistor:	61kΩ
Resistor Ratio:	1.2
Collector - Emitter Voltage VCEO:	50V
Description:	Pre-Biased Bipolar Transistor (BJT) 50V 100mA 200mW Surface Mount SOT-323
Mfr. Part #:	PDTA144EU,115
Model Number:	PDTA144EU,115
Package:	SOT-323

Contact Now

Add to Cart

Company Info.

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier

View Contact Details

Product List

Haven't found right suppliers
Our buyer assistants can help you find the most suitable, 100% reliable suppliers from China.
And this service is free of charge.
we have buyer assistants who speak English, French, Spanish......and we are ready to help you anytime!

Submit Buying Request

Product Details
Company Profile

Surface Mounted Device PNP Resistor Equipped Transistor Nexperia PDTA144EU 115 for Digital Switching

Product Overview

The Nexperia PDTA144E series is a family of PNP resistor-equipped transistors (RETs) designed for surface-mounted device (SMD) applications. These transistors feature built-in bias resistors, reducing component count, simplifying circuit design, and lowering pick-and-place costs. They offer a 100 mA output current capability and are AEC-Q101 qualified, making them suitable for digital applications in the automotive and industrial segments. The PDTA144E series serves as a cost-saving alternative to BC847/857 series in digital applications, ideal for controlling IC inputs and switching loads.

Product Attributes

Brand: Nexperia
Type: PNP Resistor-Equipped Transistor (RET)
Package Type: Surface-Mounted Device (SMD)
Qualification: AEC-Q101 qualified
Bias Resistors: R1 = 47 k, R2 = 47 k

Technical Specifications

Model	Package	NPN Complement	Package Configuration	Output Current (IO)	Collector-Emitter Voltage (VCEO)	Bias Resistor R1	Bias Resistor Ratio (R2/R1)
PDTA144EE	SOT416 (SC-75)	PDTC144EE	ultra small	-100 mA	-50 V	33 k to 61 k (Typ 47 k)	0.8 to 1.2 (Typ 1)
PDTA144EM	SOT883 (SC-101)	PDTC144EM	leadless ultra small	-100 mA	-50 V	33 k to 61 k (Typ 47 k)	0.8 to 1.2 (Typ 1)
PDTA144ET	SOT23 (TO-236AB)	PDTC144ET	small	-100 mA	-50 V	33 k to 61 k (Typ 47 k)	0.8 to 1.2 (Typ 1)
PDTA144EU	SOT323 (SC-70)	PDTC144EU	very small	-100 mA	-50 V	33 k to 61 k (Typ 47 k)	0.8 to 1.2 (Typ 1)

Symbol	Parameter	Conditions	Min	Typ	Max	Unit
VCEO	Collector-emitter voltage	open base	-	-	-50	V
IO	Output current	-	-	-	-100	mA
R1	Bias resistor 1 (input)	-	33	47	61	k
R2/R1	Bias resistor ratio	-	0.8	1	1.2	-
VCBO	Collector-base voltage	open emitter	-	-	-50	V
VEBO	Emitter-base voltage	open collector	-	-	-10	V
VI	Input voltage	positive	-	-	+10	V
VI	Input voltage	negative	-	-	-40	V
ICM	Peak collector current	single pulse; tp 1 ms	-	-	-100	mA
Ptot	Total power dissipation	Tamb 25 C PDTA144EE (SOT416)	-	-	150	mW
Ptot	Total power dissipation	Tamb 25 C PDTA144EM (SOT883)	-	-	250	mW
Ptot	Total power dissipation	Tamb 25 C PDTA144ET (SOT23)	-	-	250	mW
Ptot	Total power dissipation	Tamb 25 C PDTA144EU (SOT323)	-	-	200	mW
Tj	Junction temperature	-	-	-	150	C
Tamb	Ambient temperature	-	-65	-	+150	C
Tstg	Storage temperature	-	-65	-	+150	C
Rth(j-a)	Thermal resistance junction to ambient	PDTA144EE (SOT416)	-	-	830	K/W
Rth(j-a)	Thermal resistance junction to ambient	PDTA144EM (SOT883)	-	-	500	K/W
Rth(j-a)	Thermal resistance junction to ambient	PDTA144ET (SOT23)	-	-	500	K/W
Rth(j-a)	Thermal resistance junction to ambient	PDTA144EU (SOT323)	-	-	625	K/W
ICBO	Collector-base cut-off current	VCB = -50 V; IE = 0 A	-	-	-100	nA
ICEO	Collector-emitter cut-off current	VCE = -30 V; IB = 0 A	-	-	-1	A
ICEO	Collector-emitter cut-off current	VCE = -30 V; IB = 0 A; Tj = 150 C	-	-	-5	A
IEBO	Emitter-base cut-off current	VEB = -5 V; IC = 0 A	-	-	-90	A
hFE	DC current gain	VCE = -5 V; IC = -5 mA	80	-	-	-
VCEsat	Collector-emitter saturation voltage	IC = -10 mA; IB = -0.5 mA	-	-	-150	mV
VI(off)	Off-state input voltage	VCE = -5 V; IC = -100 A	-	-1.2	-0.8	V
VI(on)	On-state input voltage	VCE = -0.3 V; IC = -2 mA	-3	-1.6	-	V
Cc	Collector capacitance	VCB = -10 V; IE = ie = 0 A; f = 1 MHz	-	-	3	pF
fT	Transition frequency	VCE = -5 V; IC = -10 mA; f = 100 MHz	-	180	-	MHz

2410121735_Nexperia-PDTA144EU-115_C454942.pdf

Surface Mounted Device PNP Resistor Equipped Transistor Nexperia PDTA144EU 115 for Digital Switching

Send your message to this supplier


*From:	Your email address is incorrect!
*To:	Hefei Purple Horn E-Commerce Co., Ltd.
*Subject:	Subject is empty!
*Message:	For the best results, we recommend including the following details: -Self introduction -Required specifications -Inquire about price/MOQ Characters Remaining: (0/3000) Please enter 20 to 3000 characters to contact this supplier!