R-plane 1102 C-plane 0001 Sapphire Wafer For IR and UV Wavelength Applications
|
... wafers this is the Kyropoulos method (abbreviated to Ky or Kr). The Kyropoulos method is a continuation of the Czochralski method (CZ) which is used in the manufacture of silicon wafers. The Kr method allows for the production of very large ingots of...
Hangzhou Freqcontrol Electronic Technology Ltd.
|
8inch Dia100mm 0001 Sapphire Wafer 1sp Or 2sp For Semiconductor Carrier
|
... 2inch Dia50mm C axis Single Crystal Sapphire Wafer Sapphire Substrates 8inch Dia 159mm Single Crystal Sapphire Wafer For Epi - Ready Carrier 4inch/ 5inch/ 6inch/ 6.125inch/8inch c-plane R-axis (1-102) (10-10) sapphire wafer,dia200mm sapphire substrates ,2...
SHANGHAI FAMOUS TRADE CO.,LTD
|
4 Inch C Plane LED Sapphire Wafer Single Side Polished Round Shape
|
C-Plane Orientation Single Side Polished Sapphire Wafer in 4 inch Sapphire (Sapphire, also known as white sapphire, molecular formula Al2O3) single crystal is an excellent multifunctional material. It has high temperature resistance, good thermal ......
ARH Sapphire Co., Ltd
|
Sapphire Wafer 6inch DSP SSP C-plane(0001) 99,999% High Purity Monocrystalline Al2O3 LED
|
Sapphire Wafer 6inch DSP SSP C-plane(0001) 99,999% High Purity Monocrystalline Al2O3 LED Product Description of 6inch Sapphire Wafer: Sapphire wafers are a type of mineral with characteristics such as high hardness (9.0 Mohs), good transparency, and chemical stability. Sapphire wafers can be classified into two categories: natural sapphire and synthetic sapphire. Synthetic sapphire wafers......
SHANGHAI FAMOUS TRADE CO.,LTD
|
Plane (0001) 4 Inch Semi-Insulating GaN Epitaxial Layer On Sapphire Substrates
|
Plane (0001) 4 Inch Semi-Insulating GaN Epitaxial Layer On Sapphire Substrates PAM-XIAMEN’s Template Products consist of crystalline layers of gallium nitride (GaN), aluminum nitride (AlN),aluminum gallium nitride (AlGaN)and indium gallium nitride (InGaN), which are deposited on sapphire......
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
|
100mm Single Crystal Sapphire Wafer 99.995％ Al2O3
|
...Sapphire Substrate Wafer Single Side Polished Specification Orientation (22-43)Plane offcut 0.45° away from C plane-per sketch 22-43 Diameter 100mm ± 0.2mm Thickness 650um ± 20um / 850um ± 20um Bow <10 microns Warp <20 microns TTV <10 microns Major Flat M-axis +0.3°; 32+1mm Minor Flat None Front Side < 0.30nm Back Side <1.2 micron Laser ID marked on backside by major flat Packaged Cassette containing 25 wafers......
Chongqing Silian Optoelectronic Science & Technology Co., Ltd.
|
GaN Templates 2 & 4 inch
|
...plane(0001) ± 0.5° Conduction Type:N-type(Undoped); N-type(Si-doped); P-type(Mg-doped) Resistivity(300K): < 0.5 Ω·cm; < 0.05 Ω·cm; ~ 10 Ω·cm Carrier Concentration: < 5x1017 cm-3; > 1x1018 cm-3; > 6x1016 cm-3 Mobility: ~ 300cm2/V·s; ~ 200 cm2/V·s; ~ 10 cm2/V·s Dislocation Density: Less than 5x108 cm-2 Substrate structure: GaN on Sapphire......
Chongqing Newsin Technology Co., Ltd
|
Submit your “c plane 0001 sapphire wafer” inquiry in a minute :