ddr memory controller

Brand Name:MICRON

Model Number:MT46H32M16LFBF-6IT-C

Place of Origin:Thailand

... ±0.1V, VDDQ = +1.8V ±0.1V • Bidirectional data strobe per byte of data (DQS) • Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle • Differential clock inputs (CK and CK#) • Commands entered on

Brand Name:Ti

Model Number:LP2998MRX/NOPB

LP2998MRX/NOPB Power Path Management IC PMIC DDR-I & DDR-II Termination Reg 1 Features AEC-Q100 Test Guidance with the following results (SO PowerPAD-8): – Device HBM ESD Classification Level H1C – Junction Temperature Range –40°C to 125°C 1.35 V Minimum ...

Brand Name:Bicheng

Model Number:BIC-207.V1.0

Place of Origin:CHINA

... for common signals, such as PCI bus, PCI-E bus, USB, Ethernet, DDR memory, LVDS signals, etc. Impedance control eventually needs to be achieved by PCB design and a higher requirement for PCB board process is also put forward too. So we need to control the

Brand Name:TI

Model Number:TPS51200DRCR

... V Sink and Source Termination Regulator Includes Droop Compensation Requires Minimum Output Capacitance of 20-μF (Typically 3 × 10-μF MLCCs) for Memory Termination Applications (DDR) PGOOD to Monitor Output Regulation EN Input REFIN Input Allows for

Brand Name:TE Connectivity AMP Connectors

Model Number:1-1473005-1

Place of Origin:China

...DDR SDRAM Socket Details : 200 Position SODIMM DDR SDRAM Socket Surface Mount, 25° Angle Description: CONN SKT SODIMM 200POS SMD IC Category Connectors, Interconnects 　Series Memory Connectors - Inline Module Sockets MFG 　 TE Connectivity AMP Connectors 　Part number 1-1473005-1 Package 　 Tray Part Status Active Connector Style SODIMM Number of Positions 200 Memory Type DDR

Place of Origin:China

Brand Name:Customized

RK 3399 Pro VGA Development Electronic PCB Control DDR, DDR4, DDR3 Testing Before delivery, we will apply a variety of test methods to PCBA in or already mounted: IQC: Material inspection. IPQC: Production ...

Brand Name:Alliance Memory, Inc.

Model Number:AS4C32M16D1A-5TIN

...Memory, Inc. Product Category Memory ICs Series - Packaging Tray Alternate Packaging Package-Case 66-TSSOP (0.400", 10.16mm Width) Operating-Temperature -40°C ~ 85°C (TA) Interface Parallel Voltage-Supply 2.3 V ~ 2.7 V Supplier-Device-Package 66-TSOP II Memory Capacity 512M (32M x 16) Memory-Type DDR SDRAM Speed 200MHz Format-Memory...

Brand Name:Antminer

Model Number:L3+ S17

Place of Origin:Guangdong, China

...control board T17 control board Product Description Place of Origin China Brand Name Antminer Video Memory Capacity 384MB Products Status Used Rating Power <150w=""> Encryption yes Output Interface Type Ethernet Chipset Manufacturer NO Material metal Capacity 128MB Style Card Memory Interface 32 Bit Memory Clock(Mhz) 50 Interface Type Ethernet Video Memory Type DDR...

Brand Name:Ti

Model Number:LP2997MRX/NOPB

LP2997MRX/NOPB Power Path Management IC PMIC DDR-II Termination Reg FEATURES Source and Sink Current Low Output Voltage Offset No External Resistors Required Linear Topology Suspend to Ram (STR) Functionality Low External Component Count Thermal Shutdown ...

Model Number:MT46V8M16

Place of Origin:original factory

DOUBLE DATA RATE (DDR) SDRAM FEATURES • 167 MHz Clock, 333 Mb/s/p data rate • VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V • Bidirectional data strobe (DQS) transmitted/ received with data, i.e., source-synchronous data capture (x16 has two - one per byte) • ...

Brand Name:MICRON

Model Number:MT46V16M16TG-75C

Place of Origin:Original

MT46V16M16TG-75C DOUBLE DATA RATE DDR SDRAM linear integrated circuits FEATURES • 167 MHz Clock, 333 Mb/s/p data rate • VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V • Bidirectional data strobe (DQS) transmitted/ received with data, i.e., source-synchronous data ...

Brand Name:Micron Technology Inc.

Model Number:MT46V16M16P-5B:M

Place of Origin:original

... (DDR) synchronous dynamic random access memory (SDRAM) device. It is a 16 Meg x 16 bit memory device organized as 8 banks of 16 Meg x 8 bits. It is designed to operate on a 5.0V supply and is fabricated using the fast and low power ...

Brand Name:Original Factory

Model Number:S26HS01GTGABHI030

Place of Origin:CN

Memory IC S26HS01GTGABHI030 FLASH NOR Memory Chip 24-FBG Integrated Circuit Chip​ Product Description Of S26HS01GTGABHI030 S26HS01GTGABHI030 is 200 MHzFLASH - NOR Memory IC, 1Gbit HyperBus, package is 24-FBGA (6x8). Specification Of S26HS01GTGABHI030 Part Number S26HS01GTGABHI030 Density 1024 MBit Family HS-T Interface Bandwidth 400 MByte/s Interface Frequency (SDR/DDR...

Brand Name:Original Factory

Model Number:M393A4K40EB3-CWE

Place of Origin:CN

... and 2DPC configuration. Specification Of M393A4K40EB3-CWE Part Number M393A4K40EB3-CWE Density 32 GB Speed 3200 Mbps Voltage 1.2 V DDR DDR4 Dimm Type RDIMM Rank x

Place of Origin:China

Brand Name:Infinites

...Memory Module DDR3 1600MHz 2GB 4GB 8GB 16c DDR RAM Memory RAM Company Profile Infinites Tech, a subsidiary of CCFEX (China) LIMITED, is dedicated to the research and manufacturing of high-quality Computer memories solutions. The company specializes in the development of computer memory...

Brand Name:SKHYNIX

Model Number:H9HCNNNBPUMLHR- NMO

Place of Origin:KOREA

...dynamic random access memory Product Usage LPDDR is arguably the most widely used "working memory" memory for mobile devices worldwide. Low Power Double Data Rate SDRAM, a type of DDR SDRAM, also known as mDDR (Mobile DDR SDRM), is a communication standard...

Brand Name:Original Factory

Model Number:S26HS512TGABHB003

Place of Origin:CN

...Memory IC Product Description Of S26HS512TGABHB003 S26HS512TGABHB003 memory is more accurately described as Pseudo Static RAM (PSRAM). Specification Of S26HS512TGABHB003 Part Number S26HS512TGABHB003 Memory Interface HyperBus Clock Frequency 200 MHz Write Cycle Time - Word, Page 1.7ms Features Of S26HS512TGABHB003 Input during write transactions as Write data mask Optional DDR

Brand Name:Winbond Electronics

Model Number:W9751G8KB-25

Place of Origin:original

...Memory Chip Stable High-Performance Storage Solution Product Listing: W9751G8KB-25 Flash Memory Chips Features: - 25nm technology - 2-bit-per-cell NAND Flash memory - Supports up to 32GB of storage - High speed operation - Low power consumption - Supports advanced ECC algorithms - Supports SLC, MLC, and TLC - Interfaces with SDR, DDR...

Brand Name:Macronix

Model Number:MT29F4G08ABADAWP-IT:D

Place of Origin:Multi-origin

...devices. The chips feature a 4Gbyte memory capacity with a page size of 4KBytes. It also supports advanced features such as Error Correction Code (ECC), Double Data Rate (DDR), and Toggle mode. The advanced features allow for faster data transfer rates and