enhancement type mosfet

Brand Name:Mitsubishi

Model Number:RA45H4045MR-101

Place of Origin:JP

... The RA45H4045MR is a 45-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to 450-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V...

Brand Name:onsemi

Model Number:MGSF2N02ELT1G

Place of Origin:original

MOSFET Power Electronics MGSF2N02ELT1G SOT-23 Package 2.8 A 20 VN Channel Enhancement Mode MOSFET Transistor FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20 V Current - Continuous Drain (Id) @ 25°C 2.8A (Ta) Drive ...

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:6G03S

6G03S 30V N+P-Channel Enhancement Mode MOSFET Description The 6G03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other ...

Brand Name:Original Factory

Model Number:DMT47M2SFVWQ

Place of Origin:CN

... QG × RDS(ON) product (FOM) and low RDS(ON). The low RDS(ON) ensures that the on-state losses are minimal. This MOSFET assures reliable and robust end application due to 100% unclamped inductive switching and test in production. DMT47M2SFVWQ MOSFET is

Brand Name:Diodes

Model Number:DMN26D0UFB4-7

Place of Origin:UAS

DMN26D0UFB4-7 Diodes MOSFET ENHANCE MODE MOSFET 20V N-Chan X2-DFN1006 DMN26D0UFB4-7B Manufacturer: Diodes Incorporated Product Category: MOSFET Technology: Si Installation style: SMD/SMT Package/Box: X2-DFN1006-3 Transistor polarity: N-Channel Number of ...

Brand Name:DIODES

Model Number:ZXMP10A17E6TA

Place of Origin:Original

...ENHANCEMENT MODE MOSFET linear power mosfet trench power mosfet FEATURES • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • SOT23-6 package APPLICATIONS • DC–DC Converters • Power Management functions • Disconnect switches • Motor control DESCRIPTION This new generation of Trench MOSFETs...

Brand Name:FORTUNE

Model Number:FS8205A

Place of Origin:TAIWAN

FS8205A Dual N-Channel Enhancement-Mode MOSFET (20V, 6A) 1.Description This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage...

Place of Origin:China

Brand Name:Lingxun

Wide Range Of Applications High Power MOSFET TO-220F Package Fast Switching Applications: The High Power MOSFET is an ideal component for high-power applications, thanks to its high switching speed and superior power handling capabilities. It is commonly ...

Brand Name:LESITE

Model Number:standard

Place of Origin:Dongguan, China

... to inner frame according to level principle. Product name Inner frame binding machine(Enhanced Type) Color Customer Requirement Overall Dimension 700×380×800mm Weight 160kg Air pressure 6.5-7pa Speed Fast ...

Brand Name:LESITE

Model Number:standard

Place of Origin:Dongguan, China

... Machine(Enhanced Type) Technical parameters: Type: standard. lt is a new binding machine driven by air cylinder and knocking incode nails to inner frame according to level principle. Product name Inner frame binding machine(Enhanced Type) Color Customer...

Brand Name:Herrman

Place of Origin:China

Model Number:PN800-5000

Enhanced type machine bobbin PN800-5000 Dimension either according to customer’s specifications or GB4004-83, jb/t8997.4-1999, din46395 standard. For high voltage middle and low voltage XLPE

Place of Origin:Jiangsu, China

Brand Name:Grace

Model Number:DIN

Expansion Anchor Bolts Sleeve Enhanced Type Expansion Anchor Bolts Product Description We have all standard DIN, BS, JIS and ISO fasteners and other industrial parts with well-equipped testing facilities and ...

Brand Name:NSK / NTN / ASAHI / FYH / FSKG / KBE / OEM

Model Number:SNL511-609

Place of Origin:CHINA

Long Life SNL511-609 Split Plummer Housing Enhanced Type with Seals and Locating Ring Bearing Specification : Model Number SNL511-609 Part Name Plummer Block Housing Material Cast Iron / ...

Brand Name:PERFECT

Model Number:APM2020

Place of Origin:CHINA

Enhanced Type CNC Angle Punching Shearing and Marking Line (Single Blade Shearing) Model APM2020 (Angle Size: 50х50x4～200х200х20mm) 1. APPLICABLE INDUSTRY: The machine is the automatic special equipment used for angle steel marking, punching, and shearing ...

Brand Name:SATIS

Model Number:OCS-C

Place of Origin:CHINA

Model: OCS-C enhanced type crane scale Features High-strength load receptor Aluminum die-casting case LCD display with backlight American ...

Brand Name:YUYANG

Model Number:YYI008

Place of Origin:China

Multi-lens Digital Profile Projector, Optical Comparator Vertical Enhanced Type Description: 1. Vertical profile projector is mainly used for the measurement of the mechanical parts of the length, angle, contour and surface shape. 2. Rotation 360 ...

Place of Origin:Guangdong, China

Brand Name:3A

Related Products This 900 strengthen type automatic folder gluer machine It’s for bottom lock box and side glue box, Bottom lock box paper size 23-75cm Side glue box pape size 13-85cm More Service details Questions : What is the production time after ...

Brand Name:TOSHIBA

Model Number:TPC8111

Place of Origin:Taiwan

....) • High forward transfer admittance: |Yfs| = 23 S (typ.) • Low leakage current: IDSS = −10 µA (max) (VDS = −30 V) • Enhancement-mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID =

Brand Name:Infineon

Model Number:IPB200N25N3

Place of Origin:CHINA

... Threshold Yes Automotive No PPAP No Product Category Power MOSFET Configuration Single Process Technology OptiMOS 3 Channel Mode Enhancement Channel Type N Number of Elements per Chip 1 Maximum Drain Source Voltage (V) 250 Maximum Gate Source Voltage (V)

Brand Name:JUYI

Model Number:JY4N8M

Place of Origin:China

JY4N8M N Channel Enhancement Mode Power surface mount MOSFET for BLDC motor driver GENERAL DESCRIPTION: The JY4N8M utilizes the latest trench processing techniques to achieve the high cell density and ...