field effect transistor

Brand Name:Hua Xuan Yang

Model Number:G023N03LR1D-U-V

Place of Origin:ShenZhen China

Customized Size Mos Field Effect Transistor With Low ON Resistance Mos Field Effect Transistor Introduction Power MOSFETs are normally used in applications where voltages do not exceed about 200 volts. Higher voltages are not so easily achievable. Where...

Brand Name:Hua Xuan Yang

Model Number:G025N04LQ1D-U-V

Place of Origin:ShenZhen China

... power supplies DC-DC converters Low voltage motor control High Power Transistor Feature 40V/150A R DS(ON) = 2.4mΩ(typ.)@V GS = 10V R DS(ON) = 4.2mΩ(typ.)@V GS = 4.5V 100% Avalanche ...

Brand Name:Hua Xuan Yang

Model Number:G025N04LQ1D-U-V

Place of Origin:ShenZhen China

... power supplies DC-DC converters Low voltage motor control High Power Transistor Feature 40V/150A R DS(ON) = 2.4mΩ(typ.)@V GS = 10V R DS(ON) = 4.2mΩ(typ.)@V GS = 4.5V 100% Avalanche ...

Brand Name:DEC

Model Number:MXN3312

Place of Origin:Jiangxi, China

MXN3312 Field Effect Transistor Dual N - Channel Enhancement Mode Power Mosfet Product Description The MXN3312 uses advanced trench technology and design to provide ...

Brand Name:CANYI

Model Number:AP85N03NF

Place of Origin:Guangdong, China

AP85N03NF Power field effect Transistor MOSFET SMD N-Channel with Load switch Description The AP85N03NF uses advanced trench technology to provide excellent R DS(ON) low ...

Brand Name:Infineon Technologies

Model Number:IRFS3207ZTRRPBF

...Field Effect Transistor Chip Circuit Protection 75V 170A Description Power MOSFT 75V 170A 4.1mOhm Single N-Channel HEXFET Power MOSFET in a D2-Pak package Specifications Product Attribute Attribute Value Manufacturer: Infineon Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: TO-263-3 Transistor...

Brand Name:STMicroelectronics

Model Number:IPB017N10N5

Product Range IPB017N10N5 Infineon Field Effect Transistor Semiconductors Power Mosfet Transistors MOSFET N-channel 600 V, 0.175 Ohm typ 18 A MDmesh DM2 Power MOSFET in D2PAK package App Characteristics ...

Brand Name:Infineon Technologies

Model Number:IRF8736TRPBF

...Field Effect Transistor Chip Circuit protection IRF8736TRPBF 30V 18A Product range MOSFET MOSFT 30V 18A 4.8mOhm 17nC Basic data Product Attribute Attribute Value Manufacturer: Infineon Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: SOIC-8 Transistor...

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:HXY3404

SOT-23 Plastic-Encapsulate MOSFETS HXY3404 N-Channel Enhancement Mode Field Effect Transistor Product Summary ID= 6.0 A VDSS=20v RDS(on) <32 mΩ VGS =4.5V RDS(on) <40 mΩ VGS =2.5V FEATURE TrenchFET ...

Brand Name:Hua Xuan Yang

Model Number:G110P04LQ1D-U-V

Place of Origin:ShenZhen China

Vertical Structure Mos Field Effect Transistor DC/DC Converter Power Management Power MOSFET types Within the overall arena of power MOSFETs, there are a number of specific technologies that have been developed and addressed by different manufacturers...

Brand Name:Alpha Omega Semiconductor Inc

Model Number:AO3402

Product range Field Effect Transistor Ao3401a Power Mosfet P-Channel 30v 4a Sot23 Fets Single The AO3401A uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation gate voltages as low as 2.5V. This device is suitable...

Brand Name:Infineon Technologies IR

Model Number:IRFB3206PBF

IRFB3206PBF Field Effect Transistor Mosfet Single N-Channel IR 60V Product Range 60V Single N-Channel IR MOSFET™ in a TO-220AB package App ...

Brand Name:Hua Xuan Yang

Model Number:G110P04LQ1D-U-V

Place of Origin:ShenZhen China

Vertical Structure Mos Field Effect Transistor DC/DC Converter Power Management Power MOSFET types Within the overall arena of power MOSFETs, there are a number of specific technologies that have been developed and addressed by different manufacturers...

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:HXY3404

SOT-23 Plastic-Encapsulate MOSFETS HXY3404 N-Channel Enhancement Mode Field Effect Transistor Product Summary ID= 6.0 A VDSS=20v RDS(on) <32 mΩ VGS =4.5V RDS(on) <40 mΩ VGS =2.5V FEATURE TrenchFET ...

Brand Name:Alpha & Omega Semiconductor Inc.

Model Number:AO4407A

AO4407A P-Channel Enhancement Mode Field Effect Transistor The AO4407A uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM ...

Brand Name:Hua Xuan Yang

Model Number:G170C03LR1S

Place of Origin:ShenZhen China

..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 A (Vgs= 10V) - 8 A (Vgs= -10V) 12.9 mΩ

Brand Name:Hua Xuan Yang

Model Number:G170C03LR1S

Place of Origin:ShenZhen China

..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 A (Vgs= 10V) - 8 A (Vgs= -10V) 12.9 mΩ

Brand Name:Hua Xuan Yang

Model Number:G170C03LR1S

Place of Origin:ShenZhen China

..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 A (Vgs= 10V) - 8 A (Vgs= -10V) 12.9 mΩ

Brand Name:Hua Xuan Yang

Model Number:G170C03LR1S

Place of Origin:ShenZhen China

..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 A (Vgs= 10V) - 8 A (Vgs= -10V) 12.9 mΩ

Brand Name:Hua Xuan Yang

Model Number:G045P03LQ1C2

Place of Origin:ShenZhen China

...Field Effect Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available N Channel Mos Field Effect Transistor...