high voltage mosfet

Brand Name:Hua Xuan Yang

Model Number:HXY1404S

Place of Origin:ShenZhen China

... as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors. 40V/12A R DS(ON) = 13mΩ(typ.)

Brand Name:Hua Xuan Yang

Model Number:HXY1404S

Place of Origin:ShenZhen China

... as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors. 40V/12A R DS(ON) = 13mΩ(typ.)

Brand Name:Hua Xuan Yang

Model Number:HXY1404S

Place of Origin:ShenZhen China

... as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors. 40V/12A R DS(ON) = 13mΩ(typ.)

Brand Name:Hua Xuan Yang

Model Number:HXY1404S

Place of Origin:ShenZhen China

... as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors. 40V/12A R DS(ON) = 13mΩ(typ.)

Brand Name:Hua Xuan Yang

Model Number:10N60

Place of Origin:ShenZhen China

...MOSFET DESCRIPTION The UTC 10N60K-MTQ is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high...

Brand Name:Hua Xuan Yang

Model Number:10N60

Place of Origin:ShenZhen China

...MOSFET DESCRIPTION The UTC 10N60K-MTQ is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high...

Brand Name:HT

Model Number:F16N65L TO-220F-3L

Place of Origin:China

... power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in

Brand Name:HT

Model Number:F20N65L TO-220F-3L

Place of Origin:China

... power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in

Brand Name:Hua Xuan Yang

Model Number:AOD407

Place of Origin:ShenZhen China

...gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. -RoHS Compliant -Halogen Free* Parameters Part Number Status Package Polarity VDS (V) VGS (±V) ID (A) ...

Brand Name:Hua Xuan Yang

Model Number:AOD407

Place of Origin:ShenZhen China

...gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. -RoHS Compliant -Halogen Free* Parameters Part Number Status Package Polarity VDS (V) VGS (±V) ID (A) ...

Brand Name:Hua Xuan Yang

Model Number:AOD407

Place of Origin:ShenZhen China

...gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. -RoHS Compliant -Halogen Free* Parameters Part Number Status Package Polarity VDS (V) VGS (±V) ID (A) ...

Brand Name:Hua Xuan Yang

Model Number:AOD407

Place of Origin:ShenZhen China

...gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. -RoHS Compliant -Halogen Free* Parameters Part Number Status Package Polarity VDS (V) VGS (±V) ID (A) ...

Brand Name:Huixin

Model Number:BC3400

Place of Origin:China

... DC current capability Maximum ratings ( Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±12 V Continuous Drain Current ID 5.8 A Drain Current-Pulsed (note 1) IDM 30 A

Brand Name:Original brand

Model Number:NVHL040N65S3F

Place of Origin:Original

... to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is

Brand Name:Original brand

Model Number:NVHL040N65S3F

Place of Origin:Original

... to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is

Brand Name:PANJIT

Model Number:ER1004FCT

Place of Origin:Original

...Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd voltge, high current capability • High surge capacity. • Super fast recovery times, high voltage. • Pb free product are

Brand Name:NEC

Model Number:LM7805C

Place of Origin:Original

...Output transistor safe area protection ► Internal short circuit current limit ► Available in the aluminum TO-3 package Voltage Range LM7805C 5V LM7812C 12V LM7815C 15V General Description The LM78XX series of three terminal regulators is available with

Brand Name:Huixin

Model Number:BC2301

Place of Origin:China

... Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±8 V Continuous Drain Current ID -2.3 A Pulsed Drain Current IDM -10 A Continuous Source-Drain Diode Current IS

Brand Name:JUYI

Place of Origin:China

High Speed Power MOSFET and IGBT driver 3-Phase High Voltage Gate Driver DESCRIPTION The JY213H is a high speed power MOSFET and IGBT driver with three independent high and low side referenced output channels for 3-phase gate driver. Built-in deadtime protection and Shoot-through protection that prevent half-bridge breakdown. The UVLO circuits prevent malfunction when VCC and VBS are lower than the specified threshold voltage. 600V high-voltage

Brand Name:ONSEMI

Model Number:MMBTA43LT1G

Place of Origin:Original

MMBTA43LT1G high voltage power mosfet transistors , rf power mosfet transistors High Voltage Transistors NPN Silicon ORDERING INFORMATION Device Order Number Package Type Shipping† MMBTA42LT1G SOT−23 (Pb−...