low side mosfet driver

Brand Name:Infineon Technologies

Model Number:IRF7476TRPBF

Place of Origin:Multi-origin

...-source voltage of 55V, and maximum gate threshold voltage of 2.5V. 3. It has a low on-resistance of 0.022 ohms and a high power dissipation of 12W. 4. This MOSFET is ideal for applications such as DC/DC converters, audio amplifiers and motor drives. 5

Brand Name:Infineon Technologies

Model Number:IPD60R180P7SAUMA1

Place of Origin:Multi-origin

This IPD60R180P7SAUMA1 MOSFET Transistor from Infineon is a N-channel power MOSFET designed for use in high-efficiency synchronous rectification and high-voltage switching applications. This MOSFET has an RDS (on) of 0.0015Ω, an ID of 60A and an avalanche ...

Brand Name:Infineon Technologies

Model Number:BSC054N04NSG

Place of Origin:original

Fairchild BSC054N04NSG MOSFET Power Electronics High Performance and Reliable Solutions Product Name: BSC054N04NSG N-Channel MOSFET Function: This N-Channel MOSFET is a high density, low RDS(on) MOSFET ideal for switching applications. Package: SOT-23 ...

Brand Name:Infineon Technologies

Model Number:IRFB3004PBF

Place of Origin:Multi-origin

IRFB3004PBF MOSFET Power Electronics Product Description: The IRFB3004PBF is a N-channel MOSFET Power Electronics designed for use in high frequency switch-mode power supplies, general purpose switching and amplifier applications. This MOSFET has a drain-...

Brand Name:Infineon Technologies

Model Number:IRF6216TRPBF

Place of Origin:Multi-origin

...device is capable of operating from a supply voltage of up to 100V and has a low RDS(on) of 0.035Ω. It has a maximum continuous drain current of 8A and a maximum power dissipation of 22W. This MOSFET comes in a TO-220F package and is suitable for use in a

Brand Name:Texas Instruments

Model Number:DRV8106S-Q1 DRV8106H-Q1

Place of Origin:Malaysia

... of driving high-side and low-side N-channel power MOSFETs. It generates the proper gate drive voltages using an integrated doubler charge pump for the high-side and a linear regulator for the low-side. The device uses a smart gate drive architecture to

Brand Name:infineon

Model Number:IR2104STRPBF

Place of Origin:USA

...-Bridge Driver with dependent high and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is ...

Brand Name:Anterwell

Model Number:2SA970-GR

Place of Origin:original factory

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA970 Low Noise Audio Amplifier Applications • Low noise : NF = 3dB (typ.) RG = 100 Ω, VCE = −6 V, IC = −100 μA, f = 1 kHz : NF = 0.5dB (typ.) RG = 1 kΩ, VCE = −6 V, IC = −100 μA, f = 1 kHz • ...

Brand Name:Infineon Technologies

Model Number:IRS2153DSTRPBF

Place of Origin:Multi-origin

...Driver Product Name: IPA80R1K0CEXKSA2 Semiconductor IC Chip Product Description: The IPA80R1K0CEXKSA2 is a silicon based high-performance, low power integrated circuit chip. It is designed for use in a wide range of applications such as audio, video, communications, automotive, and industrial. This chip is capable of providing high speed and reliability while consuming low...

Brand Name:FAIRCHILD

Model Number:FDV305N

Place of Origin:Original

...Load switch • Battery protection • Power management Features • 0.9 A, 20 V RDS(ON) = 220 mΩ @ VGS = 4.5 V RDS(ON) = 300 mΩ @ VGS = 2.5 V • Low gate charge • Fast switching speed • High performance trench technology for extremely low RDS(ON

Brand Name:Anterwell

Model Number:IRL3713PBF

Place of Origin:original factory

...MOSFET SMPS MOSFET Applications High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use High Frequency Buck Converters for Computer Processor Power 100% RG Tested Lead-Free Benefits Ultra-Low Gate Impedance Very Low...

Brand Name:FAIRCHILD

Model Number:FDN304PZ

Place of Origin:Original

...MOSFET switching power mosfet Features · ► –2.4 A, –20 V. RDS(ON) = 52 mW @ VGS = –4.5 V RDS(ON) = 70 mW @ VGS = –2.5 V RDS(ON) = 100 mW @ VGS = –1.8 V ► Fast switching speed ► ESD protection diode ► High performance trench technology for extremely low RDS(ON) ► SuperSOTTM -3 provides low...

Brand Name:Anterwell

Model Number:IRF2907ZS-7PPBF

Place of Origin:original factory

... Specifically designed for high current, high reliability applications, this HEXFET® Power MOSFET utilizes the latest processing techniques and advanced packaging technology to achieve extremely low on-resistance and world -class current ratings.

Brand Name:FAIRCHILD

Model Number:SSS7N60B

Place of Origin:Original

SSS7N60B 600V N-Channel MOSFET power mosfet ic Field Effect Transistor Features • 7.0A, 600V, RDS(on) = 1.2Ω @VGS = 10 V • Low gate charge ( typical 38 nC) • Low Crss ( typical 23 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • ...

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:WSF6012

...MOSFET Description The WSF6012 is the highest performance trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The WSF6012 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. Features z Advanced high cell density Trench technology z Super Low...

Brand Name:Hua Xuan Yang

Model Number:5N60

Place of Origin:ShenZhen China

... MOSFET DESCRIPTION The UTC 5N60K-TCQ is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET...

Brand Name:Hua Xuan Yang

Model Number:6N60

Place of Origin:ShenZhen China

... on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors. FEATURES RDS(ON) < 1.75Ω @ VGS = 10V, ...

Brand Name:Hua Xuan Yang

Model Number:2N60- TO-220F

Place of Origin:ShenZhen China

...Mosfet Switch 2N60 TO-220F Logic Level Transistor DESCRIPTION The UTC 2N60-TC3 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET...

Brand Name:Hua Xuan Yang

Model Number:50P03NF TO-252

Place of Origin:ShenZhen China

...Mosfet Power Transistor For Load Switch Power Management Mosfet Power Transistor DESCRIPTION The 50P03NF uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as aload switch or in PWM applications. Mosfet...

Brand Name:Hua Xuan Yang

Model Number:60P03D TO-252

Place of Origin:ShenZhen China

...Mosfet Power Transistor 60P03D TO-252 30V Mosfet Power Transistor DESCRIPTION The AP60P03D uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge .Thisdevice is well suited for high current load applications. Mosfet Power Transistor GENERAL FEATURES V DS =-30V,I D =-60A R DS(ON) <15mΩ @ V GS =-10V R DS(ON) <20mΩ @ V GS =-4.5V High density cell design for ultra low...