memory ic programmer

Brand Name:Original Factory

Model Number:MT52L256M32D1PF-107 WT:B

Place of Origin:CN

...Memory IC Chip 8Gbit LPDDR3 SDRAM Mobile Memory FBGA178 Product Description Of MT52L256M32D1PF-107 WT:B MT52L256M32D1PF-107 WT:B is a 8Gbit, LPDDR3 Synchronous Dynamic Random Access Memory (SDRAM) Chips. Specification Of MT52L256M32D1PF-107 WT:B Memory Type Volatile Memory Format DRAM Technology SDRAM - Mobile LPDDR3 Memory Size 8Gbit Memory...

Brand Name:Original Factory

Model Number:EDB4432BBPA-1D-F-R

Place of Origin:CN

...Memory IC Chip 4Gbit Mobile LPDDR2 SDRAM Memory Chip WFBGA168​ Product Description Of EDB4432BBPA-1D-F-R EDB4432BBPA-1D-F-R is a single-channel Mobile LPDDR2 Synchronous Dynamic Random Access Memory (SDRAM) Chip with a capacity of 4Gbit, housed in a WFBGA-168 package. Specification Of EDB4432BBPA-1D-F-R Memory Type Volatile Memory Format DRAM Technology SDRAM - Mobile LPDDR2 Memory Size 4Gbit Memory...

Brand Name:Original Factory

Model Number:W631GU6MB-11

Place of Origin:CN

...Memory IC Chip 1Gbit Parallel 933MHz DDR3L SDRAM Memory Product Description Of W631GU6MB-11 W631GU6MB-11 is a 1G bits DDR3L SDRAM, organized as 8,388,608 words 8 banks 16 bits. This device achieves high speed transfer rates up to 2133 MT/s (DDR3L-2133) for various applications. Specifications Of W631GU6MB-11 Memory Type Volatile Memory Format DRAM Technology SDRAM - DDR3L Memory Size 1Gbit Memory Organization 64M x 16 Memory

Brand Name:Original Factory

Model Number:MT52L256M32D1PF-107 WT:B

Place of Origin:CN

...Memory IC Chip 8Gbit Mobile LPDDR3 SDRAM Memory Chip FBGA178​ Product Description Of MT52L256M32D1PF-107 WT:B MT52L256M32D1PF-107 WT:B is a mobile LPDDR3 Synchronous Dynamic Random-Access Memory​ (SDRAM) Chip with a capacity of 8Gbit, housed in a 178-FBGA (11.5x11) package. Specification Of MT52L256M32D1PF-107 WT:B Memory Type Volatile Memory Format DRAM Technology SDRAM - Mobile LPDDR3 Memory Size 8Gbit Memory...

Brand Name:Intel

Model Number:PA28F008SA85

Place of Origin:China

PA28F008SA85 Flash Memory IC Chip PA28F008 - Microchip Technology - IC FLASH 8MBIT 85NS 44PSOP PRODUCT DESCRIPTION Part number PA28F008SA85 is manufactured by TI Technologies and distributed by Stjk. As one of the leading distributors of electronic ...

Brand Name:Micron Technology Inc.

Model Number:MT48LC4M32B2B5-7:G

Place of Origin:China

Car KeyProgrammable IC Chip MT48LC4M32B2B5-7:G SDRAM Memory IC 128Mbit Parallel 143 MHz 5.5 Ns 90-VFBGA PRODUCT DESCRIPTION Part number MT48LC4M32B2B5-7:G is manufactured by Micron Technology Inc and distributed by Stjk. As one of the leading distributors...

Categories:Ceramic Capacitors

Country/Region:china

...Memory IC 8Gbit Parallel 25 ns 48-TSOP I Category Integrated Circuits (ICs) Memory Memory Mfr Kioxia America, Inc. Series - Part Status Active DigiKey Programmable Verified Memory Type Non-Volatile Memory Format FLASH Technology FLASH - NAND (SLC) Memory Size 8Gbit Memory Organization 1G x 8 Memory...

Brand Name:Infineon Technologies

Model Number:FM25V20A-GTR

Place of Origin:China

... FRAM (Ferroelectric RAM) Memory IC 2Mbit SPI 40 MHz 8-SOIC Product Attributes Product Status Active Memory Type Non-Volatile Memory Format FRAM Technology FRAM (Ferroelectric RAM) Memory Size 2Mbit Memory Organization 256K x 8 Memory Interface SPI Clock ...

Brand Name:Original Factory

Model Number:CY15B108QI-20LPXC

Place of Origin:CN

...Memory IC Product Description Of CY15B108QI-20LPXC CY15B108QI-20LPXC is a low-power, 8-Mbit nonvolatile memory employing an advanced ferroelectric process. Specification Of CY15B108QI-20LPXC Part Number CY15B108QI-20LPXC Memory Format FRAM Technology FRAM (Ferroelectric RAM) Memory Size 8Mbit Memory Organization 1M x 8 Memory...

Brand Name:Original Factory

Model Number:S27KS0642GABHM023

Place of Origin:CN

...Memory IC 24-VBGA Product Description Of S27KS0642GABHM023 S27KS0642GABHM023 Memory is a high-speed, low-pin-count, low-power self-refresh Dynamic RAM (DRAM) for high-performance embedded systems requiring expansion memory for scratchpad or buffering purposes. Specification Of S27KS0642GABHM023 Part Number S27KS0642GABHM023 Memory Size 64Mbit Memory Organization 8M x 8 Memory...

Brand Name:Original Factory

Model Number:MT29F2T08EMLEEJ4-T:E

Place of Origin:CN

...Memory IC Product Description Of MT29F2T08EMLEEJ4-T:E MT29F2T08EMLEEJ4-T:E is programmed and read using page-based operations and is erased using block-based operations. Specification Of MT29F2T08EMLEEJ4-T:E Part Number MT29F2T08EMLEEJ4-T:E Memory Type Non-Volatile Memory Format FLASH Technology FLASH - NAND (TLC) Memory Size 2Tbit Memory Organization 256G x 8 Memory...

Brand Name:Original Factory

Model Number:THGBMJG9C8LBAU8

Place of Origin:CN

...Memory IC THGBMJG9C8LBAU8 Integrated Circuit Chip Product Description Of THGBMJG9C8LBAU8 THGBMJG9C8LBAU8 eMMC flash memory is fully compliant with the Multimedia Card Association (MMCA) high-speed memory interface standard. Specification Of THGBMJG9C8LBAU8 Part Number THGBMJG9C8LBAU8 Technology FLASH - NAND Memory Size 512Gbit Memory Organization 64G x 8 Memory...

Brand Name:Original Factory

Model Number:MT53E256M32D2DS-046 AIT:B

Place of Origin:CN

Memory IC Chip MT53E256M32D2DS-046 AIT:B SDRAM Mobile LPDDR4 Memory 200-WFBGA Product Description Of MT53E256M32D2DS-046 AIT:B MT53E256M32D2DS-046 AIT:B is optimized to address power consumption in battery-powered applications. The peak bandwidth of these memory devices is 33% faster than DDR4. Compared with standard DRAM, LPDDR4 memory power consumption in standby mode is reduced to 1/5. These memory...

Brand Name:Original Factory

Model Number:MT53E1G16D1FW-046 AAT:A

Place of Origin:CN

...) is a high-speed CMOS dynamic random access storage device. Specification Of MT53E1G16D1FW-046 AAT:A Memory Size 16Gbit Memory Organization 1G x 16 Memory Interface Parallel Clock Frequency 2.133 GHz Write Cycle Time - Word, Page 18ns Access Time 3.5

Brand Name:Original Factory

Model Number:MT53E1G32D2NP-046 WT:B

Place of Origin:CN

Memory IC Chip MT53E1G32D2NP-046 WT:B 32Gbit 2.133 GHz Mobile LPDDR4 Memory Product Description Of MT53E1G32D2NP-046 WT:B MT53E1G32D2NP-046 WT:B 32Gb Low Power DDR4 SDRAM (LPDDR4) is a high-speed CMOS dynamic random access storage device optimized to solve power consumption problems in battery-powered applications. Specification Of MT53E1G32D2NP-046 WT:B Memory Type Volatile Memory Format DRAM Technology SDRAM - Mobile LPDDR4 Memory...

Brand Name:Original Factory

Model Number:MT53E512M64D2HJ-046 AAT:B

Place of Origin:CN

Memory IC Chip MT53E512M64D2HJ-046 AAT:B 32Gbit 3.5 ns Parallel SDRAM Mobile Memory Product Description Of MT53E512M64D2HJ-046 AAT:B MT53E512M64D2HJ-046 AAT:B 32Gb Low VDDQ (LPDDR4x) is a high-speed CMOS dynamic random access memory. The memory device is optimized to solve power consumption problems in battery-powered applications. The LPDDR4 memory...

Brand Name:Original Factory

Model Number:MT62F768M32D2DS-023 AUT:C

Place of Origin:CN

Memory IC Chip MT62F768M32D2DS-023 AUT:C 24Gbit LPDDR5 Memory With LVSTL Interface​ Product Description Of MT62F768M32D2DS-023 AUT:C MT62F768M32D2DS-023 AUT:C is 24Gbit Automotive LPDDR5 SDRAM Memory with LVSTL Interface. The LPDDR5 DRAM for Mobile Devices and Artificial Intelligence (AI) are designed to meet the demands of 5G networks. Specification Of MT62F768M32D2DS-023 AUT:C Memory Type Volatile Memory...

Brand Name:Original Factory

Model Number:MT29F8T08GULCEM4:C

Place of Origin:CN

Memory IC Chip MT29F8T08GULCEM4:C Higher Density 8Tbit NAND Flash Memory Chip​ Product Description Of MT29F8T08GULCEM4:C MT29F8T08GULCEM4:C is 1T x 8 Higher Density NAND Flash Memory Chip​, it offer higher density with solid performance and endurance for mass storage applications. Specification Of MT29F8T08GULCEM4:C Part Number: MT29F2T08EMLEEJ4-M:E Mounting Style: SMD/SMT Memory Size: 8 Tbit Organization: 1 T x 8 Product Type: NAND Flash Memory

Brand Name:Original Factory

Model Number:EPCS128SI16N

Place of Origin:CN

...Memory IC Chip 128Mb 40MHz Serial Configuration Flash Memory SOIC-16 Product Description Of EPCS128SI16N EPCS128SI16N device is a 128Mb 40MHz Serial Configuration flash memory device that can store configuration data that you use for FPGA configuration purpose after power on. Specifications Of EPCS128SI16N Memory Type: Flash Memory...

Brand Name:Original Factory

Model Number:MX25L12833FMI-10G

Place of Origin:CN

MX25L12833FMI-10G Memory IC Chip 128Mbit Serial NOR Flash Memory SOP16 CMOS MXSMIO Memory Product Description Of MX25L12833FMI-10G MX25L12833FMI-10G is 128Mb bits Serial NOR Flash memory, which is configured as 16,777,216 x 8 internally. When it is in two ...