memory ic programmer

Brand Name:Original Factory

Model Number:S70KS1282GABHA023

Place of Origin:CN

Memory IC Chip S70KS1282GABHA023 200MHz Pseudo SRAM Memory IC 24-FBGA​ Product Description Of S70KS1282GABHA023 S70KS1282GABHA023 The DRAM array appears to the host as though the memory uses static cells that retain data without refresh. Hence, the memory is more accurately described as pseudo static RAM (PSRAM). Specification Of S70KS1282GABHA023 Part Number S70KS1282GABHA023 Density 128 MBit Family KS-2 Initial Access Time 35 ns Memory

Brand Name:Original Factory

Model Number:MT53E384M32D2FW-046 WT:E

Place of Origin:CN

... CMOS dynamic random access memory. LPDDR4 memory is optimized to address power consumption in battery-powered applications. Compared to DDR4, its peak bandwidth is 33% faster. Compared with standard DRAM, LPDDR4 memory power consumption in standby mode is

Brand Name:Original Factory

Model Number:MT53E256M32D2DS-046 AAT:B

Place of Origin:CN

Memory IC Chip MT53E256M32D2DS-046 AAT:B 8Gbit SDRAM Mobile LPDDR4 Memory IC Product Description Of MT53E256M32D2DS-046 AAT:B MT53E256M32D2DS-046 AAT:B LPDDR4 Memory optimized to solve power consumption problems in battery-powered applications. The memory device uses multi-chip package (MCP) and package stack (PoP) design to save PCB space. LPDDR4 memory...

Brand Name:Original Factory

Model Number:MT53E1536M32D4DE-046 AIT:B

Place of Origin:CN

... a high-speed CMOS dynamic random access memory. The memory device is optimized to solve power consumption problems in battery-powered applications. The LPDDR4 memory device optimizes x16, x32, and x64 configurations to save BOM for some applications. The

Brand Name:Original Factory

Model Number:MT53E256M16D1FW-046 AIT:B

Place of Origin:CN

Memory IC Chip MT53E256M16D1FW-046 AIT:B SDRAM Mobile LPDDR4 4Gbit Memory IC Product Description Of MT53E256M16D1FW-046 AIT:B MT53E256M16D1FW-046 AIT:B​ 48Gb low-power SDRAM (LPDDR4x) is a high-speed CMOS dynamic random access memory. The memory device is optimized to solve power consumption problems in battery-powered applications. The LPDDR4 memory...

Brand Name:Original Factory

Model Number:MT53E128M32D2DS-046 AIT:A

Place of Origin:CN

... in battery-powered applications. These memory devices are designed in multi-chip packages (MCP) and package stacks (PoP) to save PCB space. Specification Of MT53E128M32D2DS-046 AIT:A Memory Size: 4 Gbit Data Bus Width: 32 bit Maximum Clock Frequency: 2

Brand Name:Original Factory

Model Number:MT53E512M64D2HJ-046 WT:B

Place of Origin:CN

Memory IC Chip MT53E512M64D2HJ-046 WT:B 32Gbit Parallel 2.133 GHz 3.5 ns Memory IC Product Description Of MT53E512M64D2HJ-046 WT:B MT53E512M64D2HJ-046 WT:B 32Gb Low-power SDRAM (LPDDR4) is a high-speed CMOS dynamic random access memory. The memory device is optimized to solve power consumption problems in battery-powered applications. The LPDDR4 memory...

Brand Name:Original Factory

Model Number:MT53E1G64D4HJ-046 AAT:A

Place of Origin:CN

Memory IC Chip MT53E1G64D4HJ-046 AAT:A Automotive 64G LPDDR4 Memory IC Product Description Of MT53E1G64D4HJ-046 AAT:A MT53E1G64D4HJ-046 AAT:A is a high-speed CMOS dynamic random access memory. LPDDR4 memory is optimized to address power consumption in battery-powered applications. Specification Of MT53E1G64D4HJ-046 AAT:A Product Category: DRAM Type: SDRAM Mobile - LPDDR4 Memory...

Brand Name:Original Factory

Model Number:MT53E1G64D4SP-046 WT:C

Place of Origin:CN

... CMOS dynamic random access memory. The memory device is designed in multi-chip package (MCP) and package stack (PoP) to save PCB space. The LPDDR4 memory device optimizes x16, x32, and x64 configurations to save BOM for some applications. Specification Of

Brand Name:Original Factory

Model Number:MT53E1G64D4NW-046 WT:C

Place of Origin:CN

Memory IC Chip MT53E1G64D4NW-046 WT:C 64 Gbit SDRAM LPDDR4 Memory IC 432-VFBGA Product Description Of MT53E1G64D4NW-046 WT:C MT53E1G64D4NW-046 WT:C 64Gb low-power SDRAM (LPDDR4) is a high-speed CMOS dynamic random access memory. These memory devices are designed in multi-chip packages (MCP) and package stacks (PoP) to save PCB space. The LPDDR4 memory...

Brand Name:Original Factory

Model Number:MT62F1G32D4DS-031 AIT:B

Place of Origin:CN

Memory IC Chip MT62F1G32D4DS-031 AIT:B WFBGA-200 32Gbit Parallel LPDDR5 Memory IC​ Product Description Of MT62F1G32D4DS-031 AIT:B MT62F1G32D4DS-031 AIT:B is 32Gbit Automotive LPDDR5 Synchronous Dynamic Random Access Memory with Parallel Interface. The LPDDR5 DRAM for Mobile Devices and Artificial Intelligence (AI) are designed to meet the demands of 5G networks. Specification Of MT62F1G32D4DS-031 AIT:B Memory Type Volatile Memory...

Brand Name:Original Factory

Model Number:MT53E256M32D1KS-046 AIT:L

Place of Origin:CN

... mode is reduced to 1/5. These memory devices are designed in multi-chip packages (MCP) and package stacks (PoP) to save PCB space. The LPDDR4 memory device optimizes x16, x32, and x64 configurations to save BOM for some applications. Specification Of

Brand Name:Original Factory

Model Number:MT53E256M32D1KS-046 WT:L

Place of Origin:CN

...-chip packages (MCP) and package stacks (PoP) to save PCB space. The LPDDR4 memory device optimizes x16, x32, and x64 configurations to save BOM for some applications. LPDDR4 memory devices are ideal for handheld devices, battery-powered applications, and

Brand Name:Original Factory

Model Number:MT53E512M32D1ZW-046BWT:B

Place of Origin:CN

... a high-speed CMOS dynamic random access memory. The memory device is optimized to solve power consumption problems in battery-powered applications. The LPDDR4 memory device optimizes x16, x32, and x64 configurations to save BOM for some applications. The

Brand Name:Original Factory

Model Number:MT41K256M16TW-107 XIT:P

Place of Origin:CN

.... Specification Of MT41K256M16TW-107 XIT:P Memory Organization 256M x 16 Memory Interface Parallel Clock Frequency 933 MHz Access Time 20 ns Voltage - Supply 1.283V ~ 1.45V Operating ...

Brand Name:Original brand

Model Number:AT29C020-90PC

Place of Origin:Original Factory

...MEMORY IC CHIP AT29C020-90PC ---- 2-MEGABIT 256K X 8 5-VOLT ONLY CMOS FLASH MEMORY Quick Detail: 2-Megabit 256K x 8 5-volt Only CMOS Flash Memory Specifications: Datasheets AT29C020 Product Photos AT15.24 Series Standard Package 12 Category Integrated Circuits (ICs) Family Memory Series - Packaging Tube Format - Memory FLASH Memory Type FLASH Memory...

Brand Name:Original Factory

Model Number:MT29F2G08ABAEAH4-IT:E

Place of Origin:CN

...Memory IC Chip 2Gbit Parallel NAND Flash Memory Chip VFBGA63 Product Description Of MT29F2G08ABAEAH4-IT:E MT29F2G08ABAEAH4-IT:E is a 2Gbit Parallel, NAND Flash Memory IC , the package is 63-VFBGA (9x11). Specification Of MT29F2G08ABAEAH4-IT:E Memory Type Non-Volatile Memory Format FLASH Technology FLASH - NAND Memory Size 2Gbit Memory Organization 256M x 8 Memory...

Brand Name:Original Factory

Model Number:MX30LF2G18AC-XKI

Place of Origin:CN

... Memory IC. Specification Of MX30LF2G18AC-XKI Memory Type Non-Volatile Memory Format FLASH Technology FLASH - NAND (SLC) Memory Size 2Gbit Memory Organization 256M x 8 Memory Interface Parallel Write Cycle Time - Word, Page 20ns Access Time 20 ns Voltage -

Model Number:TMF0064DRPR

TMF0064DRPR Memory IC Chip 64Kbit Serial Non-Volatile Memory VSON-6 Serial FRAM Memory TMF0064DRPR Memory IC Chip featuring 64Kbit Serial Non-Volatile Memory in VSON-6 package with Serial FRAM Memory technology. MJD Advantage 15 years experience for ...

Brand Name:Original Factory

Model Number:MT52L256M32D1PF-093 WT:B

Place of Origin:CN

...Memory IC Chip 8Gbit LPDDR3 Synchronous Dynamic Random-Access Memory​ Product Description Of MT52L256M32D1PF-093 WT:B MT52L256M32D1PF-093 WT:B is an SDRAM - Mobile LPDDR3 memory IC with a capacity of 8Gbit, housed in a 178-FBGA (11.5x11) package. Specification Of MT52L256M32D1PF-093 WT:B Memory Type Volatile Memory Format DRAM Technology SDRAM - Mobile LPDDR3 Memory Size 8Gbit Memory...