silicon carbide grit

Brand Name:CH Refractories

Model Number:HTJ

Place of Origin:China

Steel Plants And High Temperature Kiln Applied Silicon Carbide Castable Silicon Carbide Castable Silicon Carbide Castable is developed with high quality bauxite, corundum and SiC as the main raw materials, and bonded by low cement or ultra-low ...

Brand Name:ZG

Model Number:MS

Place of Origin:CHINA

Silicon carbide crucible The silicon carbide crucible is made of silicon carbide material by isostatic pressing and pressure-free sintering. Can be made of round, square crucible, flat bottom, half flat bottom and spherical bottom, can also be added flange...

Brand Name:ZG

Model Number:MS

Place of Origin:CHINA

Silicon Carbide Graphite Crucible Silicon carbide crucible matching furnace type: it can be used for gas producer, gas furnace, coke oven, oil furnace, resistance furnace, induction furnace, oil stove, biological pellet furnace, etc. Application: melting gold, silver, copper, aluminum, lead, zinc and other non-ferrous metals, and medium carbon steel and all kinds of rare metal alloys.The silicon carbide...

Brand Name:ZG

Model Number:MS

Place of Origin:CHINA

..., silver, copper, aluminum, lead, zinc and other non-ferrous metals, and medium carbon steel and all kinds of rare metal alloys.The silicon carbide crucible can be applied to

Brand Name:ZG

Model Number:MS

Place of Origin:CN

High Temperature Silicon Carbide Heating Elements 1400 °C Silicon Carbide Heating Rod With the largest production capacity in the World, and wide range of quality products, ZG Heating Industry is able to support our ...

Brand Name:KAMTAI

Model Number:KTRKF1000

Place of Origin:CHINA

silicon carbide plate for kiln furniture 1. Description Silicon carbide products with high strength, high hardness, high wear resistance, high temperature resistance, corrosion resistance, oxidation resistance, and good thermal shock resistance, thermal conductivity, and heat-resistant and anti-radical quenching high-temperature creep . Silicon Carbide...

Brand Name:KAMTAI

Model Number:KTRKF10000

Place of Origin:CHINA

silicon carbide kiln plate 1.Chemical and Physical index of silicon carbide plate: Main Performance Index of Silicon Carbide(SiC) Item Unit SiC Purity % ≥90 Density g/cm3 2.75 Shore Hardness HS 110-125 Elastic ...

Brand Name:KAMTAI

Model Number:KTRKF10000

Place of Origin:CHINA

High Strength Silicon Carbide Kiln Shelves 1. Introduction High Strength Silicon Carbide Kiln Shelves are thin, lightweight made from an advanced Nitride-bonded Silicon Carbide composition, stronger and weigh half or less compared with a conventional 1” ...

Brand Name:WEEM

Model Number:1026 wide belt

Place of Origin:China

Silicon Carbide Anti-Static Treatment Paper Wide Belt Sanding Belts Quick Detail: WEEM 1026 wide belts are constructed anti-static, resin over resin, closed coated and sharp silicon carbide on f-weight heavy paper for wide sander. Description: WEEM 1026 wide belts constructed resin over resin, closed coated and sharp silicon carbide...

Brand Name:Original Factory

Model Number:MSC2X30SDA170J

Place of Origin:CN

...Silicon Carbide MSC2X30SDA170J SIC Integrated Circuit Chip SOT-227 Diode Arrays​ Product Description Of MSC2X30SDA170J MSC2X30SDA170J is 1700V Dual Silicon Carbide (SiC) Schottky Barrier Diode (SBD). Specification Of MSC2X30SDA170J Part Number MSC2X30SDA170J Diode Configuration 2 Independent Technology SiC (Silicon Carbide...

Brand Name:Original Factory

Model Number:MSC010SDA170B

Place of Origin:CN

...SiC SBD in a TO-247 package. Specification Of MSC010SDA170B Part Number: MSC010SDA170B Technology: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1700 V Current - Average Rectified (Io) (Per Diode): 31A Voltage - Forward (...

Brand Name:Original Factory

Model Number:DF11MR12W1M1PB11BPSA1

Place of Origin:CN

...Channel (Dual) MOSFET Arrays. ​Specification Of DF11MR12W1M1PB11BPSA1 Part Number DF11MR12W1M1PB11BPSA1 Technology Silicon Carbide (SiC) Current - Continuous Drain (Id) @ 25°C 50A (Tj) Gate Charge (Qg) (Max) @ Vgs 124nC @ 15V ...

Brand Name:Original Factory

Model Number:DF8MR12W1M1HFB67BPSA1

Place of Origin:CN

... Mount, 2 N-Channel Transistors Module. ​Specification Of DF8MR12W1M1HFB67BPSA1 Part Number DF8MR12W1M1HFB67BPSA1 Technology Silicon Carbide (SiC) Configuration 2 N-Channel FET Feature Silicon Carbide (SiC) Drain to Source Voltage (Vdss) 1200V Current -

Brand Name:Original Factory

Model Number:DF17MR12W1M1HFB68BPSA1

Place of Origin:CN

..., 1200 V 45A (Tj) 20mW, Chassis Mount. Specification Of DF17MR12W1M1HFB68BPSA1 Part Number: DF17MR12W1M1HFB68BPSA1 Technology: SiC (Silicon Carbide Junction Transistor) Drain To Source Voltage (Vdss): 1200V Vgs(Th) (Max) @ Id: 5.15V @ 20mA Power -

Brand Name:Original Factory

Model Number:MSC030SDA120K

Place of Origin:CN

...Silicon Carbide Schottky MSC030SDA120K TO-220-2 Rectifiers Single Diodes​ Product Description Of MSC030SDA120K MSC030SDA120K is a 1200V, 70A Silicon Carbide Schottky Diodes in a two-lead TO-220 package, Through Hole. Specification Of MSC030SDA120K Part Number MSC030SDA120K Technology SiC (Silicon Carbide...

Brand Name:Original Factory

Model Number:MSCSM70TLM10C3AG

Place of Origin:CN

... (Tc), Through Hole Module. Specification Of MSCSM70TLM10C3AG Part Number MSCSM70TLM10C3AG Technology Silicon Carbide (SiC) Configuration 4 N-Channel Drain to Source Voltage (Vdss) 700V Current - Continuous Drain (Id) @ 25°C 241A (Tc) ...

Brand Name:Original Factory

Model Number:MSC130SM120JCU3

Place of Origin:CN

...Silicon Carbide Power Module 1200V 173A N-Channel​ Product Description Of MSC130SM120JCU3 MSC130SM120JCU3 is Buck Chopper SiC MOSFET Power Module,1200 V, 173 A full Silicon Carbide power module. Specification Of MSC130SM120JCU3 Part Number MSC130SM120JCU3 FET Type N-Channel Technology SiCFET (Silicon Carbide...

Brand Name:Original Factory

Model Number:MSC100SM70JCU3

Place of Origin:CN

...IGBT Modules MSC100SM70JCU3 N-Channel IGBT Silicon Carbide Modules 365W Product Description Of MSC100SM70JCU3 MSC100SM70JCU3 is Silicon carbide (SiC) Schottky diode, a buck chopper 700 V, 124 A full Silicon Carbide (SiC) power module. Specification Of ...

Brand Name:Original Factory

Model Number:MSCSM70DUM07T3AG

Place of Origin:CN

...Silicon Carbide MSCSM70DUM07T3AG MOSFET Power Module 988W ​ Product Description Of MSCSM70DUM07T3AG MSCSM70DUM07T3AG is 700V/353A dual common source silicon carbide (SiC) MOSFET power module. Specification Of MSCSM70DUM07T3AG Part Number MSCSM70DUM07T3AG Technology Silicon Carbide...

Brand Name:Original Factory

Model Number:IMYH200R012M1H

Place of Origin:CN

..., Through Hole, package is TO-247-4. Specification Of IMYH200R012M1H Part Number IMYH200R012M1H FET Type N-Channel Technology SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss) 2000 V Current - Continuous Drain (Id) @ 25°C 123A (Tc)